2004. 3. 11 1/1 semiconductor technical data e65a21vbs, E65A21VBR stack silicon diffused diode revision no : 0 alternator diode for automotive application. features h average forward current : i o =65a. h zener voltage : 21v(typ.) polarity e65a21vbs (+ type)E65A21VBR (- type) maximum rating (ta=25 ? ) dim millimeters b-pf 11.5 max 12.75+0.09-0.00 1.3 0.04 4.2 0.28.0 0.2 typ 0.5 10.0 0.2 0.4 0.1 x 45 0.2+0.1 28.35 0.5 a 8.5 max h bc d e f gh i j k f e i d g b j k a + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit forward voltage v f i fm =100a - - 1.05 v zener voltage v z i z =10ma 19 21 23 v reverse current i r v r =20v - - 0.3 a transient thermal resistance v f i fm =100a, i m =100ma, pw=100ms - - 50 mv breakdown voltage v br i rsm =65a, pw=10ms - - 34 v reverse leakage current underhigh temperature hi r ta=150 ? , v r =20v - - 100 a temperature resistance r th dc total junction to case - - 0.5 ? /w characteristic symbol rating unit average forward current i f(av) 65 a peak 1 cycle surge current i fsm 450 (60hz) a non-repetitive peak reverse surge current (10ms) i rsm 65 a transient peak reverse voltage v rsm 19 v peak reverse voltage v rm 16 v junction temperature t j -40 q 215 ? storage temperature range t stg -40 q 215 ? downloaded from: http:///
|
